LX802 |
RFQ for LX802 Required Field |
 |
| Product | Manufacturers | Pack | D/C | |||||||||||
| LX802 | - | - | - |
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.
| Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
| 80Watts | 1.80/W | 200 | -65to150 | 405A | 70V | 70V | 20V |
